KTX512T Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
DC/DC CONVERTER APPLICATIONS.
FEATURES
ᴌComposite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
ᴌThe KTX512T is formed with two chips, one being equivalent to
the KTA1535T and the other the KDR411S, encapsulated in one packages.
ᴌUltrasmall package facilitates miniaturization in end products
(mounting height 0.7Ὂ).
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
6
5
4
Q1
D1
D B ^{Type Name}
Lot No.
1
2
3
1
2
3
KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
E
K
B
K
1
6
2
5
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. Q ₁ EMITTER
2. Q ₁ BASE
3. D ₁ ANODE
4. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
5. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
6. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
TS6
MAXIMUM RATING (Ta=25á´±)
Transistor Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
Diode (SBD) D₁
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Output Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
2002. 1. 24
Revision No : 1
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C *
T_j
T_stg
SYMBOL
V_RRM
V_R
I_D
I_FSM
T_j
T_stg
RATING
-20
-20
-5
-3
-5
600
0.9
150
-55ᴕ150
UNIT
V
V
V
A
A
mA
W
á´±
á´±
RATING
40
20
0.5
3
125
-40ᴕ125
UNIT
V
V
A
A
á´±
á´±
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