KTX511T Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
DC/DC CONVERTER APPLICATIONS.
FEATURES
ᴌComposite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
ᴌThe KTX511T consists of two chips which are equivalent to the
KTA1532T and the KDR701S, respectively.
ᴌUltrasmall-sized package permiting applied sets to be made small
and slim (mounting height 0.7Ὂ).
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
654
Q1
D1
D A ^{Type Name}
Lot No.
1
2
3
1
2
3
KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
E
K
B
K
1
6
2
5
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. Q ₁ EMITTER
2. Q ₁ BASE
3. D ₁ ANODE
4. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
5. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
6. Q₁, D ₁ COMMON (COLLECTOR, CATHODE)
TS6
MAXIMUM RATING (Ta=25á´±)
Transistor Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
Diode (SBD) D₁
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge Current
Junction Temperature
Storage Temperature Range
2002. 1. 24
Revision No : 1
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C *
T_j
T_stg
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
-20
-20
-5
-1.5
-3
-300
0.9
150
-55ᴕ150
UNIT
V
V
V
A
A
mA
W
á´±
á´±
RATING
30
30
0.7
5
125
-55ᴕ150
UNIT
V
V
A
A
á´±
á´±
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