KTX421U Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
MARKING
6
5
4
Q2
Q1
BS ^{Type Name}
Lot No.
1
2
3
1
2
3
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
KTX421U
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ DRAIN
4. Q₂ SOURCE
5. Q₂ GATE
6. Q₁ COLLECTOR
US6
Q₁ MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_{CP *}
P_{C *}
T_j
T_stg
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
15
12
6
500
1
150
150
-55 150
Q₂ MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DS
V_GSS
I_D
P_{C **}
T_ch
T_stg
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
30
20
100
150
150
-55 150
2008. 9. 23
Revision No : 1
UNIT
V
V
V
mA
A
mW
UNIT
V
V
mA
mW
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