KTX411T Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
D1
Marking
5
h_FE Rank
C ^{Type Name}
4
Lot No.
1
2
3
123
MARK SPEC
Type
KTX411T
Q₁ h_FE Rank : Y
Mark
CE
KTX411T
Q₁ h_FE Rank : GR
CF
KTX411T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
E
B
1
5
2
3
4
DIM MILLIMETERS
A
2.9+_ 0.2
B
1.6+0.2/-0.1
C
0.70+_ 0.05
D
0.4+_ 0.1
E
2.8+0.2/-0.3
F
1.9+_ 0.2
G
0.95
H
0.16+_ 0.05
I
0.00-0.10
J 0.25+0.25/-0.15
K
0.60
L
0.55
H
J
J
1. D ₁ ANODE
2. Q ₁ EMITTER
3. Q ₁ BASE
4. Q ₁ COLLECTOR
5. D ₁ CATHODE
TSV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
DIODE D₁
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge current
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
T_stg
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
30
20
5
1
-1
0.9
150
-55~150
RATING
25
20
1.0
3
125
-55~125
UNIT
V
V
V
A
A
UNIT
V
V
A
2002. 8. 13
Revision No : 2
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