KTX402U Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Marking
5
Type Name
4
D1
Q1
CG
1
2
MARK SPEC
Type
Mark
3
KTX402U
Q₁ h_FE Rank : Y
CG
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE (SBD) D₁
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Junction Temperature
Storage Temperature Range
1
2
3
KTX402U
Q₁ h_FE Rank : GR
CJ
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
SYMBOL
V_RM
V_R
I_FM
I_O
I_FSM
T_j
T_stg
2003. 3. 11
Revision No : 1
KTX402U
EPITAXIAL PLANAR NPN TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. D ₁ ANODE
2. Q ₁ BASE
3. Q ₁ EMITTER
4. Q ₁ COLLECTOR
5. D₁ CATHODE
USV
RATING
60
50
5
150
30
100
150
-55~125
RATING
30
30
300
200
1
125
-55 125
UNIT
V
V
UNIT
V
V
A
1/4