KTX401U Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌIncluding two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Marking
5
Type Name
4
D1
Q1
CD
1
2
3
MARK SPEC
Type
Mark
KTX401U
Q₁ h_FE Rank : Y
CD
1
2
3
KTX401U
Q₁ h_FE Rank : GR
CE
KTX401U
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_0.1
T
T 0.15+0.1/-0.05
G
1. D ₁ ANODE
2. Q ₁ EMITTER
3. Q ₁ BASE
4. Q ₁ COLLECTOR
5. D₁ CATHODE
USV
MAXIMUM RATINGS (Ta=25á´±)
TRANSISTOR Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE D₁
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
SYMBOL
V_RM
V_R
I_FM
I_O
I_FSM
P_D
T_j
T_stg
RATING
60
50
5
150
30
100
150
-55~150
RATING
85
80
300
100
2
-
150
-55ᴕ150
UNIT
V
V
Ὠ
Ὠ
Ὠ
á½­
á´±
á´±
UNIT
V
V
Ὠ
Ὠ
A
á½­
á´±
á´±
2002. 1. 24
Revision No : 3
1/2