KTX312T Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hIncluding two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
hSimplify circuit design.
hReduce a quantity of parts and manufacturing process.
KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
EQUIVALENT CIRCUIT (TOP VIEW)
MAXIMUM RATINGS (Ta=25)
TRANSISTOR Q₁
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600ɛƒ0.8ɘ)
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C *
T_j
T_stg
DIODE D₁
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge current
Junction Temperature
Storage Temperature
2003. 3. 11
Revision No : 1
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
-20
-20
-5
-1.5
-3
0.9
150
-55~125
RATING
25
20
1.0
3
125
-55~125
UNIT
V
V
V
A
A
W


UNIT
V
V
A
A


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