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KTX311T Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE | |||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
D1
Marking
5
hFE Rank
C Type Name
4
Lot No.
1
2
3
123
MARK SPEC
Type
KTX311T
Q1 hFE Rank : Y
Mark
CB
KTX311T
Q1 hFE Rank : GR
CC
KTX311T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
E
B
1
5
2
3
4
DIM MILLIMETERS
A
2.9+_ 0.2
B
1.6+0.2/-0.1
C
0.70+_ 0.05
D
0.4+_ 0.1
E
2.8+0.2/-0.3
F
1.9+_ 0.2
G
0.95
H
0.16+_ 0.05
I
0.00-0.10
J 0.25+0.25/-0.15
K
0.60
L
0.55
H
J
J
1. D 1 ANODE
2. Q 1 EMITTER
3. Q 1 BASE
4. Q 1 COLLECTOR
5. D 1 CATHODE
TSV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
DIODE D1
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC *
Tj
Tstg
SYMBOL
VRRM
VR
IO
IFSM
Tj
Tstg
RATING
-30
-20
-5
-1
1
0.9
150
-55~150
RATING
25
20
1.0
3
125
-55~125
UNIT
V
V
V
A
A
UNIT
V
V
A
2002. 8. 13
Revision No : 2
1/4
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