KTX216U Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
hIncluding two devices in US6.
(Ultra Super mini type with 6 leads.)
hWith Built-in bias resistors.
hSimplify circuit design.
hReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q₁
C
Q₂
OUT
B
R1
IN
Q₂
R1=10KΩ
R2=10KΩ
R2
E
COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
6
5
Type Name
4
Q1
Q2
BL
1
2
3
Q1 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1, Q2 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2004. 2. 28
Revision No : 0
1
2
3
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP *
SYMBOL
V_O
V_I
I_O
SYMBOL
P_D *
T_j
T_stg
KTX216U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q₁ (EMITTER)
2. Q₁ (BASE)
3. Q₂ OUT (COLLECTOR)
4. Q₂ COMMON (EMITTER)
5. Q₂ IN (BASE)
6. Q₁ (COLLECTOR)
US6
RATING
15
12
6
500
1
RATING
50
30, -10
100
RATING
200
150
-55q150
UNIT
V
V
V
ɶ
"
UNIT
V
V
ɶ
UNIT
É»


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