KTX101E Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR (GENERAL PURPOSE)

SEMICONDUCTOR
TECHNICAL DATA
KTX101E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌIncluding two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
MARKING
Type Name ₆
5
4 _{hFE Rank}
Q1
Q2
B
1
2
3
1
2
3
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
TES6
Q₁ MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
RATING
60
50
5
150
30
UNIT
V
V
V
Ὠ
Ὠ
Q₂ MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
RATING
-50
-50
-5
-150
-30
UNIT
V
V
V
Ὠ
Ὠ
Q_{1 ,} Q₂ MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
P_C *
T_j
T_stg
RATING
200
150
-55ᴕ150
UNIT
á½­
á´±
á´±
2002. 1. 24
Revision No : 1
1/5