KTN2907U_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=-50nA(Max.) ; V_CE=-30V, V_EB=-0.5V.
hLow Saturation Voltage
: V_CE(sat)=-0.4V(Max.) ; I_C=-150mA, I_B=-15mA.
hComplementary to the KTN2222U/2222AU.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907U KTN2907AU
Collector-Base Voltage
V_CBO
-60
V
Collector-Emitter Voltage
V_CEO
-40
-60
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
Collector Power Dissipation
(Ta=25)
P_C
Junction Temperature
T_j
-600
mA
100
mW
150

Storage Temperature Range
T_stg
-55q150

KTN2907U/AU
EPITAXIAL PLANAR PNP TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
ZD
Lot No.
Type Name
ZH
Lot No.
KTN2907U
KTN2907AU
MARK SPEC
TYPE
KTN2907U
KTN2907AU
MARK
ZD
ZH
2008. 8. 29
Revision No : 5
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