KTN2907S_02 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=-50nA(Max.) ; V_CE=-30V, V_EB=-0.5V.
Low Saturation Voltage
: V_CE(sat)=-0.4V(Max.) ; I_C=-150mA, I_B=-15mA.
Complementary to the KTN2222S/2222AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907S KTN2907AS
Collector-Base Voltage
V_CBO
-60
V
Collector-Emitter Voltage
V_CEO
-40
-60
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
Collector Power Dissipation
P_C
(Ta=25 )
-600
mA
350
mW
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Package Mounted On 99.5% Alumina 10x8x0.6mm.
KTN2907S/AS
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
ZD
Lot No.
ZH ^{Type Name}
Lot No.
MARK SPEC
TYPE
KTN2907S
KTN2907AS
MARK
ZD
ZH
2002. 4. 9
Revision No : 4
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