KTN2907AE Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=-50nA(Max.) ; V_CE=-30V, V_EB=-0.5V.
Low Saturation Voltage
: V_CE(sat)=-0.4V(Max.) ; I_C=-150mA, I_B=-15mA.
Complementary to the KTN2222AE.
KTN2907AE
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
2
D _{DIM MILLIMETERS}
A
1.60 +_ 0.10
1
3
B
0.85+_ 0.10
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60 +_0.10
G
1.00 +_ 0.10
H
0.50
J
0.13+_ 0.05
J
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
-60
-60
-5
-600
100
150
-55 150
UNIT
V
V
V
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
ESM
Marking
ZH
2004. 1. 29
Revision No : 0
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