KTN2222_12 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=10nA(Max.) ; V_CE=60V, V_EB(OFF)=3V.
hLow Saturation Voltage
: V_CE(sat)=0.3V(Max.) ; I_C=150mA, I_B=15mA.
hComplementary to the KTN2907/2907A.
hKTN2222/2222A Electrically Similar to 2N2222/2222A.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222 KTN2222A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25)
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
60
75
V
30
40
V
5
6
V
600
mA
625
mW
150

Storage Temperature Range
T_stg
-55q150

KTN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
2003. 6. 16
Revision No : 2
1/5