KTN2222S_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=10nA(Max.) ; V_CE=60V, V_EB(OFF)=3V.
hLow Saturation Voltage
: V_CE(sat)=0.3V(Max.) ; I_C=150mA, I_B=15mA.
hComplementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage
V_CBO
60
75
V
Collector-Emitter Voltage
V_CEO
30
40
V
Emitter-Base Voltage
V_EBO
5
6
V
Collector Current
I_C
600
mA
Collector Power Dissipation
(Ta=25)
P_C
350
mW
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150

Note : P_C* : Package Mounted on 99.5% alumina 10ƒ8ƒ0.6mm.
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
Type Name
ZB
Lot No.
ZG ^{Type Name}
Lot No.
MARK SPEC
TYPE
KTN2222S
KTN2222AS
MARK
ZB
ZG
1999. 5. 4
Revision No : 2
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