KTN2222S_12 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hLow Leakage Current
: I_CEX=10nA(Max.) ; V_CE=60V, V_EB(OFF)=3V.
hLow Saturation Voltage
: V_CE(sat)=0.3V(Max.) ; I_C=150mA, I_B=15mA.
hComplementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25)
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
60
75
V
30
40
V
5
6
V
600
mA
350
mW
150

Storage Temperature Range
T_stg
-55q150

Note : P_C* : Package Mounted on 99.5% alumina 10ƒ8ƒ0.6mm.
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
ZB
Lot No.
ZG ^{Type Name}
Lot No.
MARK SPEC
TYPE
KTN2222S
KTN2222AS
MARK
ZB
ZG
1999. 5. 4
Revision No : 2
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