KTK999S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – N Channel MOSFET

SEMICONDUCTOR
TECHNICAL DATA
FOR FM AUDIO TUNER
FEATURES
High Forword Transter Admittance
Low Noise Gain Controlled Amplifier
Maximum Ratings (Ta=25 )
CHARACTERISTIC
Drain Source Voltage
Drain Current
Drain Power Dissipation (T_S 76 )
Channel Temperature
Storage Temperature range
SYMBOL
V_DS
I_D
P_D
T_CH
T_STG
RATING
20
30
200
150
-55~150
UNIT
V
mA
mW
KTK999S
N Channel MOSFET
E
L
B
L
2
3
1
P
P
M
1. DRAIN
2. GATE
3. SOURCE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
M 2 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain Source Breakdown Voltage
Gate-Source Breakdown Voltage
Gate Leakage Currnet
Drain Current
Gate Source Pinch Voltage
V_(BR)DSX
V_(BR)GSS
I_GSS
I_DSS
V_GS(OFF)
Forward Transfer Admittance
y_fs
Input Capacitance
C_iss
Output Capacitance
C_oss
Power Gain
G_P
Noise Figure
NF
TEST CONDITIONS
I_D=10 A, V_GS= -4V
I_GS= 10mA, V_DS= 0
V_GS= 5A, V_DS= 0
V_DS=10V, V_GS= 0
V_DS=10V, I_D=20 A
V_DS=10V, I_D=10mA
V_DS=10V, I_D=10mA, f= 10MHz
V_DS=10V, I_D=10mA, f= 45MHz
MIN TYP MAX UNIT
20
-
-
V
6.5 -
12 V
-
-
50 A
5
10 16 mA
- -0.8 -1.5 V
14 20
-
mS
-
2.5
-
pF
-
0.9
-
-
27
-
dB
-
2.1
-
2007. 4. 2
Revision No : 0
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