KTK951S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY /
HIGH FREQUENCY AMPLIFIER APPLICATION
FEATURES
Low Gain Controlled Amplifier
High Transter Admittance
Maximum Ratings (Ta=25 )
CHARACTERISTIC
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Drain Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_GDO
V_GSO
I_G
I_D
P_D
T_j
T_stg
RATING
-22
-22
10
50
150
150
-55~150
UNIT
V
V
mA
mA
mW
KTK951S
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. SOURCE
2. DRAIN
3. GATE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
IDSS Rank
Type Name
J
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
Gate-Source Breakdown Voltage
Gate-Source Cut-off Voltage
Gate Leakage Currnet
Drain Current
Forward Transfer Admittance
V_(BR)GSS
V_GS(OFF)
I_GSS
I_DSS(Note)
y_fs
V_DS=0V, I_G=-10
V_DS=5V, I_D=10
V_DS=0V, V_GS=-15V
V_DS=5V, V_GS=0V
V_DS=5V, V_GS=0V, f=1kHz
Input Capacitance
C_iss
V_DS=5V, V_GS=0V, f=1MHz
Note : I_DSS Classification C : 12~22, D : 18~30, E : 27~40
2009. 5. 15
Revision No : 0
MIN TYP MAX UNIT
-22
-
-
V
0
- -2.5 V
-
-
10
A
12
-
40 mA
20 30
-
mS
-
9
-
pF
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