KTK921U Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTK921U
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
RF Switching for VCR/DVD/Set Top Box Tuner
FEATURES
Low loss at on state(Typ 1dB@1GHz)
With built-in bias diode
Gate 3.3V operating
M
1
2
N
E
B
M
4D
DIM MILLIMETERS
A
2.00 +_ 0.20
B
1.25 +_ 0.15
C
0.90 +_ 0.10
3
D
0.3+0.10/-0.05
E
2.10+_ 0.20
H
0.15+0.1/-0.06
J
1.30
K
0.00 ~ 0.10
H
L
0.70
K
N
M
0.42
N
0.10 MIN
FET Maximum Ratings (Ta=25 )
CHARACTERISTIC
Drain-Source-Voltage
Drain-Gate-Voltage
Source-Gate-Voltage
Drain Current
SYMBOL
V_DS
V_DG
V_SG
I_D
RATING
3
7
7
10
UNIT
V
V
V
mA
1. Diode Cathode
2. FET Gate & Diode Anode
3. FET Drain
4. FET Source
USQ
EQUIVALENT CIRCUIT
4(S)
3(D)
DIODE Maximum Ratings (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forword Current
SYMBOL
V_R
I_F
RATING
35
100
UNIT
V
mA
FET DIODE Maximum Ratings (Ta=25 )
CHARACTERISTIC
SYMBOL
Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
200
150
-55~150
UNIT
mW
1(C)
2(G,A)
Marking
4
3
Type Name
MC
1
2
Lot No.
2010. 2. 17
Revision No : 0
1/2