English
Language : 

KTK596S Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)
SEMICONDUCTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VGDO
IG
ID
PD
Tj
Tstg
RATING
-20
10
1
150
150
-55 150
UNIT
V
mA
mA
mW
KTK596S
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
E
L BL
2
3
1
P
P
M
1. SOURCE
2. DRAIN
3. GATE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
I DSS Rank
Type Name
F
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Foward Transfer Admittance
Input Capacitance
V(BR)GDO
VGS(OFF)
IDSS (Note)
| yfs |
Ciss
IG=-100 A
VDS=5V, ID=1 A
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
Note : IDSS Classification Y(1) : 150~240, GR(2) : 210~320
MIN.
-20
-
150
0.4
-
-
TYP.
-
-0.6
-
1.2
3.5
0.65
MAX.
-
-1.5
320
-
-
-
UNIT
V
V
A
mS
pF
pF
2002. 9. 17
Revision No : 3
1/5