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KTK596 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE) | |||
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SEMICONDUCTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VGDO
IG
ID
PD
Tj
Tstg
RATING
-20
10
1
400
150
-55 150
UNIT
V
mA
mA
mW
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
H
M
C
EE
1 2 3N
L
1. SOURCE
2. GATE
3. DRAIN
O DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G 14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP.
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Foward Transfer Admittance
Input Capacitance
V(BR)GDO
VGS(OFF)
IDSS (Note)
| yfs |
Ciss
IG=-100 A
VDS=5V, ID=1 A
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
-20
-
-
-0.6
100
-
0.4
1.2
-
3.5
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
-
0.65
Note : IDSS Classification A:100 170, B:150 240, C:210 350, C1:210~310, C2:290~350, D:320 480
MAX.
-
-1.5
480
-
-
-
UNIT
V
V
A
mS
pF
pF
2002. 8. 7
Revision No : 3
1/3
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