KTK5164U Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V_th=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
EQUIVALENT CIRCUIT
D
RATING
60
20
200
100
150
-55 150
UNIT
V
V
mA
mW
G
KTK5164U
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
MB
2
1
N
K
M
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. SOURCE
2. GATE
3. DRAIN
USM
Marking
KF ^{Type Name}
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
V_GS= 16V, V_DS=0V
I_D=100 A, V_GS=0V
V_DS=60V, V_GS=0V
V_DS=10V, I_D=1mA
V_DS=10V, I_D=50mA
I_D=50mA, V_GS=2.5V
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
10V
V_IN
0
10µs
I_D =100mA
V_OUT
V_IN :t _r , t _f < 5ns
D.U. _=< 1% (Z OUT=50Ω)
V_DD = 30V
MIN.
-
60
-
0.5
100
-
-
-
-
-
TYP.
-
-
-
-
-
1.5
55
13
40
8
MAX.
1
-
1
1.5
-
2
65
18
50
-
UNIT
A
V
A
V
mS
pF
pF
pF
-
14
-
nS
-
35
-
-
75
-
2008. 8. 11
Revision No : 0
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