KTK5164S_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – ANALOG SWITCH APPLICATIONS

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
h2.5 Gate Drive.
hLow Threshold Voltage : V_th=0.5q1.5V.
hHigh Speed.
hSmall Package.
hEnhancement-Mode.
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
EQUIVALENT CIRCUIT
RATING
60
‚20
200
200
150
-55q150
UNIT
V
V
mA
mW


KTK5164S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
Marking
KM ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
Rise Time
t_r
Turn-on Time
t_on
Switching Time
Fall Time
t_f
Turn-off Time
t_off
TEST CONDITION
V_GS=‚16V, V_DS=0V
I_D=100ǺA, V_GS=0V
V_DS=60V, V_GS=0V
V_DS=10V, I_D=1mA
V_DS=10V, I_D=50mA
I_D=50mA, V_GS=2.5V
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
2002. 10. 17
Revision No : 1
MIN.
-
60
-
0.5
100
-
-
-
-
-
TYP.
-
-
-
-
-
1.5
55
13
40
8
MAX.
‚1
-
1
1.5
-
2
65
18
50
-
UNIT
ǺA
V
ǺA
V
mS
ʃ
pF
pF
pF
-
14
-
nS
-
35
-
-
75
-
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