KTK5164S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)

SEMICONDUCTOR
TECHNICAL DATA
KTK5164S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V_th=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
)
SYMBOL
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
EQUIVALENT CIRCUIT
D
RATING
60
20
200
200
150
-55 150
UNIT
V
V
mA
mW
E
L BL
2
3
1
P
P
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
G
Lot No.
KM ^{Type Name}
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
SYMBOL
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
TEST CONDITION
V_GS= 16V, V_DS=0V
I_D=100 A, V_GS=0V
V_DS=60V, V_GS=0V
V_DS=10V, I_D=1mA
V_DS=10V, I_D=50mA
I_D=50mA, V_GS=2.5V
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
t_r
10V
I_D =100mA
V_OUT
t_on
V_IN
0
t_f
10µs
V_DD = 30V
t_off
V_IN :t _r , t _f < 5ns
D.U. _=< 1% (Z OUT=50Ω)
MIN.
-
60
-
0.5
100
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
1.5
55
13
40
8
MAX.
1
-
1
1.5
-
2
65
18
50
-
UNIT
A
V
A
V
mS
pF
pF
pF
14
-
nS
35
-
75
-
2002. 10. 17
Revision No : 1
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