KTK5162S_09 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
RATING
60
20
100
200
150
-55 150
UNIT
V
V
mA
mW
KTK5162S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L BL
2
3
1
P
P
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
EQUIVALENT CIRCUIT
D
G
Marking
KF ^{Type Name}
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_on
t_off
TEST CONDITION
V_GS= 16V, V_DS=0V
I_D=100 A, V_GS=0V
V_DS=60V, V_GS=0V
V_DS=10V, I_D=0.1mA
V_DS=10V, I_D=50mA
I_D=50mA, V_GS=10V
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
V_DS=10V, V_GS=0V, f=1MHz
V_DD=25V, I_D=50mA, V_GS=0 10V
2009. 2. 10
Revision No : 1
MIN.
-
60
-
1
100
-
-
-
-
-
-
TYP.
-
-
-
-
-
3
6.2
1.5
4.4
0.021
0.18
MAX.
1
-
1
2.4
-
7.5
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
S
S
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