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KTK5134S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) | |||
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
á´2.5 Gate Drive.
á´Low Threshold Voltage : Vth=0.5á´1.5V.
á´High Speed.
á´Small Package.
á´Enhancement-Mode.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PD
Tch
Tstg
EQUIVALENT CIRCUIT
D
RATING
30
á´¦20
200
200
150
-55á´150
UNIT
V
V
mA
mW
á´±
á´±
G
KTK5134S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
KD Type Name
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS=á´¦16V, VDS=0V
ID=100á»A, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
VDS=3V, ID=50mA
ID=50mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=3V, ID=10mA, VGS=0á´2.5V
2001. 10. 29
Revision No : 0
MIN.
-
30
-
0.5
100
-
-
-
-
-
-
TYP.
-
-
-
-
-
1.2
70
23
58
60
120
MAX.
á´¦1
-
1
1.5
-
2
-
-
-
-
-
UNIT
á»A
V
á»A
V
mS
á½µ
pF
pF
pF
nS
nS
1/3
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