KTK5132U_08 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V_th=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
V_DS
30
V_GSS
20
I_D
100
P_D *
200
T_ch
150
Storage Temperature Range
T_stg
-55 150
Note) * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT
V
V
mA
mW
EQUIVALENT CIRCUIT
D
G
KTK5132U
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
MB
2
1
N
K
M
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. SOURCE
2. GATE
3. DRAIN
USM
Marking
KB ^{Type Name}
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_on
t_off
TEST CONDITION
V_GS= 16V, V_DS=0V
I_D=100 A, V_GS=0V
V_DS=30V, V_GS=0V
V_DS=3V, I_D=0.1mA
V_DS=3V, I_D=10mA
I_D=10mA, V_GS=2.5V
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DD=5V, I_D=10mA, V_GS=0 5V
2008. 9. 10
Revision No : 1
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
1
-
1
1.5
-
7
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
nS
1/3