KTK5132S_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – ANALOG SWITCH APPLICATIONS

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
h2.5 Gate Drive.
hLow Threshold Voltage : V_th=0.5q1.5V.
hHigh Speed.
hSmall Package.
hEnhancement-Mode.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GSS
DC Drain Current
I_D
Drain Power Dissipation
P_D
Channel Temperature
T_ch
Storage Temperature Range
T_stg
RATING
30
‚20
100
200
150
-55q150
UNIT
V
V
mA
mW


EQUIVALENT CIRCUIT
D
G
KTK5132S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
Marking
KB ^{Type Name}
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_on
t_off
TEST CONDITION
V_GS=‚16V, V_DS=0V
I_D=100ǺA, V_GS=0V
V_DS=30V, V_GS=0V
V_DS=3V, I_D=0.1mA
V_DS=3V, I_D=10mA
I_D=10mA, V_GS=2.5V
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DD=5V, I_D=10mA, V_GS=0q5V
2002. 6. 21
Revision No : 1
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
‚1
-
1
1.5
-
7
-
-
-
-
-
UNIT
ǺA
V
ǺA
V
mS
ʃ
pF
pF
pF
nS
nS
1/3