KTK5131E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V_th=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
V_DS
V_GSS
I_D
P_D
T_ch
Storage Temperature Range
T_stg
RATING
30
20
50
100
150
-55 150
UNIT
V
V
mA
mW
EQUIVALENT CIRCUIT
D
G
KTK5131E
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
DIM MILLIMETERS
A
1.60+_ 0.10
2
D
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. SOURCE
2. GATE
3. DRAIN
ESM
Marking
Type Name
KA
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching
Time
Turn-on Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_on
t_off
TEST CONDITION
V_GS= 16V, V_DS=0V
I_D=100 A, V_GS=0V
V_DS=30V, V_GS=0V
V_DS=3V, I_D=0.1mA
V_DS=3V, I_D=10mA
I_D=10mA, V_GS=2.5V
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DS=3V, V_GS=0V, f=1MHz
V_DD=3V, I_D=10mA, V_GS=0 2.5V
MIN.
-
30
-
0.5
20
-
-
-
-
-
-
TYP.
-
-
-
-
-
15
5.5
1.6
6.5
140
140
MAX.
1
-
1
1.5
-
40
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
nS
2002. 6. 17
Revision No : 0
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