KTK211 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
High Forward Transfer Admittance.
: |y_fs| =9mS(Typ.)
Extremely Low Reverse Transfer Capacitance.
: C_rss=0.1pF(Typ.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_GDO
I_G
P_D
T_j
T_stg
RATING
-18
10
150
150
-55 150
UNIT
V
mA
mW
KTK211
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
E
L BL
2
3
1
P
P
M
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
I_DSS Rank
Type Name
K
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
I_GSS
V_(BR)GDO
I_DSS (Note)
V_GS(OFF)
|y_fs|
C_rss
G_PS
V_GS=-0.5V, V_DS=0
I_G=-100 A
V_GS=0, V_DS=10V
V_DS=10V, I_D=1 A
V_DS=10V, V_GS=0, f=1kHz
V_GD=-10V, f=1MHz
V_DD=10V, f=100MHz (Fig.)
Noise Figure
NF
V_DD=10V, f=100MHz (Fig.)
Note : I_DSS Classification O:1.0 3.0, Y:2.5 6.0,
GR(G):5.0 10.0, BL(B):9.0 15.0
2003. 2. 25
Revision No : 2
MIN.
-
-18
1.0
-0.4
-
-
-
-
TYP.
-
-
-
-
9
0.10
18
2.5
MAX.
-10
-
15
-4.0
-
0.15
-
3.5
UNIT
nA
V
mA
V
mS
pF
dB
dB
1/3