KTK161 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
ᴌLow Noise Figure.
: NF=2.5dB(Typ.) (f=100MHz).
ᴌHigh Forward Transfer Admittance.
:|y_fs|= 9mS(Typ.).
ᴌExtremely Low Reverse Transfer Capacitance.
: C_rss=0.1pF(Typ.)
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Gate-Drain Voltage
Gate-Current
Drain Power Dissipation
Junction Temperature
V_GDO
I_G
P_D
T_j
Storage Temperature Range
T_stg
RATING
-18
10
400
150
-55ᴕ150
UNIT
V
mA
mW
á´±
á´±
KTK161
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
H
M
C
EE
1 2 3N
L
1. DRAIN
2. SOURCE
3. GATE
O ^{DIM MILLIMETERS}
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G
14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
I_GSS
V_(BR)GDO
I_DSS (Note)
V_GS(OFF)
|y_fs|
C_rss
G_ps
V_GS=-0.5V, V_DS=0
I_G=-100ỌA
V_DS=10V, V_GS=0V
V_DS=10V, I_D=1ỌA
V_DS=10V, V_GS=0, f=1kHz
V_GD=-10V, f=1MHz
V_DD=10V, f=100MHz (Fig.)
Noise Figure
NF
V_DD=10V, f=100MHz (Fig.)
Note : I_DSS Classification O:1.0ᴕ3.0, Y:2.5ᴕ6.0, GR:5.0ᴕ10.0, BL:9.0ᴕ15.0
MIN.
-
-18
1.0
-0.4
-
-
-
-
TYP.
-
-
-
-
9.0
0.10
18
2.5
MAX.
-10
-
15.0
-4.0
-
0.15
-
3.5
UNIT
nA
V
mA
V
mS
pF
dB
dB
1995. 1. 24
Revision No : 0
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