KTJ6131E_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – ANALOG SWITCH APPLICATIONS

SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
h2.5 Gate Drive.
hLow Threshold Voltage : V_th=-0.5q-1.5V.
hHigh Speed.
hSmall Package.
hEnhancement-Mode.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
V_DS
V_GSS
I_D
P_D
T_ch
Storage Temperature Range
T_stg
RATING
-30
‚20
-50
100
150
-55q150
UNIT
V
V
mA
mW


EQUIVALENT CIRCUIT
KTJ6131E
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
I_GSS
V_(BR)DSS
I_DSS
V_th
|Y_fs|
R_DS(ON)
C_iss
C_rss
C_oss
t_on
t_off
TEST CONDITION
V_GS=‚16V, V_DS=0V
I_D=-100ǺA, V_GS=0V
V_DS=-30V, V_GS=0V
V_DS=-3V, I_D=-0.1mA
V_DS=-3V, I_D=-10mA
I_D=-10mA, V_GS=-2.5V
V_DS=-3V, V_GS=0V, f=1MHz
V_DS=-3V, V_GS=0V, f=1MHz
V_DS=-3V, V_GS=0V, f=1MHz
V_DD=-3V, I_D=-10mA, V_GS=0q-2.5V
MIN.
-
-30
-
-0.5
15
-
-
-
-
-
-
TYP.
-
-
-
-
-
20
10.4
2.8
8.4
0.15
0.13
MAX.
‚1
-
-1
-1.5
-
40
-
-
-
-
-
UNIT
ǺA
V
ǺA
V
mS
ʃ
pF
pF
pF
ǺS
ǺS
2014. 3. 31
Revision No : 1
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