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KTH2369 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING APPLICATION.
FEATURES
High Frequency Characteristics
: fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).
Excellent Switching Characteristics.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
40
15
4.5
500
625
150
-55 150
UNIT
V
V
V
mA
mW
KTH2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
KTH2369/A
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=20V, IE=0
VCB=20V, IE=0, Ta=125
IC=10 A, IE=0
IE=10mA, IB=0
IE=10 A, IC=0
IC=10mA, VCE=1.0V
DC Current *
Gain
KTH2369
KTH2369A
KTH2369
IC=10mA, VCE=1.0V, Ta=-55
hFE
IC=10mA, VCE=0.35V, Ta=-55
IC=100mA, VCE=2.0V
KTH2369A
IC=100mA, VCE=1.0V
Collector-Emitter Saturation Voltage *
VCE(sat) IC=10mA, IB=1.0mA
Base-Emitter Saturation Voltage *
VBE(sat) IC=10mA, IB=1.0mA
Transition Frequency
fT
IC=10mA, VCE=10V, f=100MHz
Collector Output Capacitance
Cob
VCB=5.0V, IE=0, f=1.0MHz
Storage Time
Turn-on Time
Turn-off Time
tstg
IC=100mA, IB1=-IB2=10mA, VCC=10V
ton
VCC=3.0V, IC=10mA,
IB1=3.0mA, IB2=-1.5mA
toff
IC=10mA, IB1=3.0mA
IB2=-1.5mA, VCC=3.0V
Note : *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
MIN.
-
-
40
15
4.5
40
20
20
20
20
-
0.70
500
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
0.4
30
-
-
-
120
-
-
-
-
0.25
0.85
-
4.0
13
UNIT
A
V
V
V
MHz
pF
-
-
12
nS
-
-
15
2002. 6. 17
Revision No : 2
1/2
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