KTD998_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency
Amplifier Output Stage.
Complementary to KTB778.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
RATING
120
120
5
10
15
1
80
150
-55 150
UNIT
V
V
V
A
A
W
KTD998
TRIPLE DIFFUSED NPN TRANSISTOR
DIM MILLIMETERS
A
U
C
A
R
B
C
W
W
D
16.30 MAX
12.00+_ 0.30
5.50+_ 0.20
1.20 MAX
E
8.00
V
F
5.00
G
17.00+_ 0.30
H 0.60+0.15/-0.10
I
2.50
M
I
K
N
J
20.0+_ 0.1
K
4.00
D
L
2.00
M
2.20 MAX
N
3.05 MAX
H
O
5.45
OO
P
3.50
Q
1.00
R
3.00+_ 0.20
123
S
37.0
T
42.0
U Φ3.40+0.15/-0.10
V
10
1. BASE
W
8
2. COLLECTOR
3. EMITTER
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
I_CBO
I_EBO
V_(BR)CEO
h_FE (Note)
V_CE(sat)
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification R:55 110, O:80 160
TEST CONDITION
V_CB=120V, I_E=0
V_EB=5V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=1A
I_C=5A, I_B=0.5A
V_CE=5V, I_C=5A
V_CE=5V, I_C=1A
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
120
55
-
-
-
-
TYP.
-
-
-
-
-
-
12
170
MAX.
10
10
-
160
2.5
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2009. 10. 7
Revision No : 2
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