KTD882_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTB772.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse (Note)
Base Current (DC)
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : Pulse Width 10mS, Duty Cycle 50%.
RATING
40
30
5
3
7
0.6
1.5
10
150
-55 150
UNIT
V
V
V
A
A
W
KTD882
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.5+_ 0.5
2.3+_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Current Gain Bandwidth Product
I_CBO
I_EBO
h_FE(1)
h_FE(2) (Note)
V_CE(sat)
V_BE(sat)
f_T
V_CB=30V, I_E=0
V_EB=3V, I_C=0
V_CE=2V, I_C=20mA
V_CE=2V, I_C=1A
I_C=2A, I_B=0.2A
I_C=2V, I_B=0.2A
V_CE=5V, I_C=0.1A
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: h_FE(2) Classification O:100 200 , Y:160 320 , GR:200 400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
150
160
0.3
1.0
90
45
MAX.
1
1
-
400
0.5
2.0
-
-
UNIT
A
A
V
V
MHz
pF
2003. 6. 16
Revision No : 4
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