KTD863_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
hHigh Voltage : V_CEO=60V(Min.).
hHigh Current : I_C(Max.)=1A.
hHigh Transition Frequency : f_T=150MHz(Typ.).
hWide Area of Safe Operation.
hComplementary to KTB764.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
60
60
5
1
2
1
150
-55q150
UNIT
V
V
V
A
W


KTD863
TRIPLE DIFFUSED NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_(BR)CEO
V_CE(sat)
V_BE(sat)
f_T
V_CB=50V, I_E=0
V_EB=4V, I_C=0
V_CE=2V, I_C=50mA
V_CE=2V, I_C=1A
I_C=1mA, I_B=0
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE=10V, I_C=50mA
Collector Output Capacitance
C_ob
V_CB=10V, f=1MHz, I_E=0
Note : h_FE(1) Classification O:60q120, Y:100q200, GR:160q320
MIN.
-
-
60
30
60
-
-
-
-
TYP.
-
-
-
-
-
0.15
0.85
150
12
MAX.
1
1
320
-
-
0.5
1.2
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
2012. 11. 02
Revision No : 2
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