KTD600K_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V_CEO 120V, high current 1A.
Low saturation voltage and good linearity of h_FE.
Complementary to KTB631K.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
120
120
5
1
2
1.5
8
150
-55 150
UNIT
V
V
V
A
W
KTD600K
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) Note
h_FE(2)
f_T
C_ob
V_CE(sat)
V_BE(sat)
V_CB=50V, I_E=0
V_EB=4V, I_C=0
I_C=10 A, I_E=0
I_C=1mA, I_B=0
I_E=10 A, I_C=0
V_CE=5V, I_C=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=50mA
V_CB=10V, f=1MHz, I_E=0
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
Turn-on Time
t_on
Switching Time
Turn-off Time
t_off
20u sec
I _B1
I_B2
1
1Ω
24Ω
100Ω
1uF
1uF
Storage Time
t_stg
Note : h_FE(1) Classification Y:100 200, GR:160 320
-2V
12V
V_CE =12V
I_C =10I _B1 =-10I_B2 =500mA
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
A
A
V
V
V
MHz
pF
V
V
-
100
-
-
500
-
nS
-
700
-
2003. 7. 24
Revision No : 3
1/2