KTD2854_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTD2854
EPITAXIAL PLANAR NPN TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
High DC Current Gain
: h_FE=2000(Min.) (V_CE=2V, I_C=1A)
Low Saturation Voltage
: V_CE(sat)=1.5V(Max.) (I_C=1A, I_B=1mA)
Complementary to KTB2234.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
100
100
8
2
3
0.5
1
150
-55 150
UNIT
V
V
V
A
A
W
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
EQUIVALENT CIRCUIT
COLLECTOR
BASE
−∼4kΩ
−∼800Ω
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
TEST CONDITION
V_CB=80V, I_E=0
V_EB=8V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=1A(Pulse)
I_C=1A, I_B=1mA(Pulse)
I_C=1A, I_B=1mA(Pulse)
V_CE=2V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
Turn On Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
EMITTER
MIN.
-
-
100
2000
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
MAX.
10
4
-
-
1.5
2.0
-
-
UNIT
A
mA
V
V
V
MHz
pF
-
0.4
-
-
4.0
-
S
-
0.6
-
2001. 10. 23
Revision No : 0
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