KTD2854 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (MICRI MOTOR DRIVE, HAMMER DRIVE, SWITCHING POWER AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
KTD2854
EPITAXIAL PLANAR NPN TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
ᴌHigh DC Current Gain
: h_FE=2000(Min.) (V_CE=2V, I_C=1A)
ᴌLow Saturation Voltage
: V_CE(sat)=1.5V(Max.) (I_C=1A, I_B=1mA)
ᴌComplementary to KTB2234.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
100
100
8
2
3
0.5
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
EQUIVALENT CIRCUIT
COLLECTOR
BASE
−∼4kΩ
−∼800Ω
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
Turn On Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
TEST CONDITION
V_CB=80V, I_E=0
V_EB=8V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=1A(Pulse)
I_C=1A, I_B=1mA(Pulse)
I_C=1A, I_B=1mA(Pulse)
V_CE=2V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
20µs
I_B1
INPUT ^IB1
I_B2
I _B2
I_B1=-I _B2 =1mA
DUTY CYCLE ^<= 1%
OUTPUT
V_CC =30V
EMITTER
MIN.
-
-
100
2000
-
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
0.4
MAX.
10
4
-
-
1.5
2.0
-
-
UNIT
ỌA
mA
V
V
V
MHz
pF
-
-
4.0
-
ỌS
-
0.6
-
2001. 10. 23
Revision No : 0
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