KTD2686 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – DARLINGTON TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTD2686
EPITAXIAL PLANAR NPN TRANSISTOR
DARLINGTON TRANSISTOR.
SOLENOID DRIVER. MOTOR DRIVER.
FEATURES
High DC Current Gain
: h_FE=2000(Min.) (V_CE=2V, I_C=1A)
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
V_CBO
50
V
V_CEO
60 10
V
V_EBO
8
V
I_C
1
A
I_CP
3
I_B
0.5
A
Collector Power t=10S
2.5
Dissipation
DC
P_C *
W
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 )
A
C
H
G
D
D
K
FF
123
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50+_ 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
Type Name
Lot No.
EQUIVALENT CIRCUIT
COLLECTOR
BASE
−∼ 5kΩ
∼− _300Ω
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Switching
Time
Storage Time
Fall Time
I_CBO
I_CEO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)1
V_CE(sat)2
V_BE(sat)
V_CB=45V, I_E=0
V_CE=45V, I_B=0
V_EB=8V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=1A
I_C=0.5A, I_B=1mA
I_C=1A, I_B=1mA
I_C=1A, I_B=1mA
t_on
20µs
t_stg
5V
INPUT
0V
t_f
DUTY CYCLE <= 1%
-
-
0.8
50
2000
-
-
-
V_CC =30V
-
30Ω
OUTPUT
-
-
TYP. MAX. UNIT
-
10
A
-
10
A
-
4
mA
60 70
V
-
-
-
1.2
V
-
1.5
-
2.0
V
0.4
-
4.0
-
S
0.6
-
2004. 11. 22
Revision No : 1
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