KTD2424_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTD2424
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : h_FE=3000(Min.) (V_CE=2V, I_C=1A)
Complementary to KTB1424.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
80
60
10
3
0.5
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE(1)
h_FE(2)
Saturation Voltage
Collector-Emitter
Base-Emitter
V_CE(sat)
V_BE(sat)
TEST CONDITION
V_CB=80V, I_E=0
V_EB=10V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=1A
V_CE=2V, I_C=3A
I_C=3A, I_B=30mA
I_C=3A, I_B=30mA
MIN.
-
-
60
3000
1000
-
-
TYP.
-
-
-
-
-
-
-
MAX.
20
100
-
-
-
1.5
2.0
UNIT
A
A
V
V
2007. 5. 22
Revision No : 1
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