KTD2092_07 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTD2092
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
High h_FE : h_FE=500 1500 (I_C=0.5A).
Low Collector Saturation :V_CE(sat)=0.35V(Max.) (I_C=1A).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
100
80
7
3
5
1
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
COLLECTOR
BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Forward Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
V_ECF
f_T
C_ob
Turn-on Time
t_on
Switching Time
Storage Time
T_stg
Fall Time
t_f
TEST CONDITION
V_CB=80V, I_E=0
V_EB=7V, I_C=0
I_C=50mA, I_B=0
V_CE=1V, I_C=0.5A
V_CE=1V, I_C=1A
I_C=1A, I_B=0.01A
I_C=1A, I_B=0.01A
I_E=3A, I_B=0
V_CE=5V, I_C=1A
V_CE=10V, I_E=0, f=1MHz
20µsec
I_B1
INPUT
I_B1
0
I_B2
I_B2
I_B1=-I _B2 =10mA
DUTY CYCLE < 1%
OUTPUT
V_CC =30V
MIN.
-
-
80
500
150
-
-
-
-
-
-
-
-
EMITTER
TYP.
-
-
-
-
-
-
-
-
140
30
MAX.
10
10
-
1500
-
0.35
1.2
2.5
-
-
UNIT
A
A
V
V
V
V
MHz
pF
0.5
-
5.0
-
S
0.7
-
2007. 5. 22
Revision No : 3
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