KTD1898_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTB1260.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
P_C*
T_j
Storage Temperature Range
T_stg
* Mounted on ceramic substrate (250mm² 0.8t)
RATING
100
80
5
1
-1
500
1
150
-55 150
UNIT
V
V
V
A
A
mW
W
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE(Note)
V_CE(sat)
f_T
V_CB=80V, I_E=0
V_EB=4V, I_C=0
I_C=1mA, I_B=0
V_CE=3V, I_C=500mA
I_C=500mA, I_B=20mA
V_CE=10V, I_C=50mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
80
70
-
-
-
TYP.
-
-
-
-
-
100
20
MAX.
1
1
-
400
0.4
-
-
UNIT
A
A
V
V
MHz
pF
2003. 7. 3
Revision No : 1
1/3