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| KTD1882 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) | |||
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SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
á´Complementary to KTB1772.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
DC
IC
Collector Current
Pulse (Note)
ICP
Base Current (DC)
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : Pulse Width â10mS, Duty Cycleâ50%.
RATING
40
30
5
3
7
0.6
625
150
-55á´150
UNIT
V
V
V
A
A
mW
á´±
á´±
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Current Gain Bandwidth Product
Collector Output Capacitance
ICBO
IEBO
hFE(1)
hFE(2) (Note)
VCE(sat)
VBE(sat)
fT
Cob
VCB=30V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=0.2A
IC=2V, IB=0.2A
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
* Pulse Test : Pulse Widthá´ª350á»S, Duty Cycleá´ª2% Pulsed
Note: hFE(2) Classification O:100á´200 , Y:160á´320 , GR:200á´400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
150
160
0.3
1.0
90
45
MAX.
1
1
-
400
0.5
2.0
-
-
UNIT
á»A
á»A
V
V
MHz
pF
2000. 12. 8
Revision No : 0
1/2
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