KTD1863_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
High Breakdown Voltage and High Current
: V_CEO=80V, I_C=1A.
Low V_CE(sat)
Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
100
80
5
1
-1
1
150
-55 150
UNIT
V
V
V
A
A
W
KTD1863
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE (Note)
V_CE(sat)
f_T
V_CB=80V, I_E=0
V_EB=4V, I_C=0
I_C=1mA, I_B=0
V_CE=3V, I_C=500mA
I_C=500mA, I_B=20mA
V_CE=10V, I_C=50mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
80
70
-
-
-
TYP.
-
-
-
-
-
100
20
MAX.
1
1
-
400
0.4
-
-
UNIT
A
A
V
V
MHz
pF
1998. 8. 21
Revision No : 1
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