 English |
|
|
|
|
|
|
|
| KTD1854T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR | |||
| |||
|
SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
á´AF amplifier, solenoid drivers, LED drivers.
á´Darlington connection.
á´High DC current gain.
á´Very small-sized package permitting sets to be made
smaller and slimer.
á´Complementary to KTB1234T.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
10
DC
IC
200
Collector Current
Pulse
ICP
400
Collector Power Dissipation
PC *
0.9
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55á´150
* Package mounted on a ceramic board (600á½á´§0.8á½)
UNIT
V
V
V
mA
W
á´±
á´±
EQUIVALENT CIRCUIT
COLLECTOR
BASE
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
L Y Type Name
Lot No.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE 1
hFE 2
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
TEST CONDITION
VCB=60V, IE=0
VEB=8V, IC=0
IC=10á»A, IE=0
IC=1mA, IB=0
IC=10á»A, IC=0
VCE=2V, IC=10mA
VCE=2V, IC=100mA
IC=100mA, IB=100á»A
IC=100mA, IB=100á»A
2001. 10. 23
Revision No : 0
MIN.
-
-
80
50
10
5000
4000
-
-
TYP.
-
-
-
-
0.9
1.5
MAX.
100
100
-
-
1.5
2.0
UNIT
nA
nA
V
V
V
V
V
1/2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese