KTD1824 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)

SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
ᴌHigh foward current transfer ratio h_FE.
ᴌLow collector to emitter saturation voltage V_CE(sat).
ᴌHigh emitter to base voltage V_EBO.
ᴌLow noise voltage NV.
ᴌUSM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
Storage Temperature Range
T_stg
RATING
50
40
15
50
100
100
150
-55ᴕ150
UNIT
V
V
V
mA
mW
á´±
á´±
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E
M
B
M
2
1
N
K
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
3
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
H
M
0.70
0.42+_ 0.10
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
L
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
I_CBO
I_CEO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE (Note)
V_CE(sat)
V_CB=20V, I_E=0
V_CE=20V, I_B=0
I_C=10ỌA, I_E=0
I_C=1mA, I_B=0
I_E=10ỌA, I_C=0
V_CE=10V, I_C=2mA
I_C=10mA, I_B=1mA
Transition Frequency
Note : h_FE Classification
f_T
V_CB=10V, I_E=-2mA, f=200MHz
A:400~800, B:600~1200, C:1000~2000
MIN.
-
-
50
40
15
400
-
-
TYP.
-
-
1000
0.05
120
MAX.
100
1
2000
0.2
-
UNIT
nA
ỌA
V
V
V
V
MHz
2001. 11. 29
Revision No : 1
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