KTD1624 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTB1124.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
V_CBO
60
V_CEO
50
V_EBO
6
I_C
3
I_CP
6
P_C
500
P_C*
1
T_j
150
Storage Temperature Range
T_stg
-55ᴕ150
* : Package mounted on ceramic substrate(250mm²á´§0.8t)
UNIT
V
V
V
A
A
mW
W
á´±
á´±
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE(1) (Note)
h_FE (2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=2V, I_C=100Ὠ
V_CE=2V, I_C=3A
I_C=2A, I_B=100Ὠ
I_C=2A, I_B=100Ὠ
V_CE=10V, I_C=50Ὠ
V_CB=10V, f=1á½², I_E=0
Turn-on Time
t_on
Switching
Time
Storage Time
t_stg
PDWC =<=210%µs _{I B1}
INPUT
VR
50
R8
I _B2
100µ
Fall Time
t_f
-5V
10I_B1=-10I_B2 =I _C=1A
Note : h_FE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
25
470µ
25V
2001. 12. 6
Revision No : 4
MIN.
-
-
100
35
-
-
-
-
TYP.
-
-
-
-
0.19
0.94
150
25
MAX.
1
1
400
-
0.5
1.2
-
-
UNIT.
ὧ
ὧ
V
V
á½²
ὸ
-
70
-
-
650
-
nS
-
35
-
1/3