KTD1415V Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTD1415V
EPITAXIAL PLANAR NPN TRANSISTOR
INDUSTRIAL USE.
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
hHigh DC Current Gain : h_FE=2000(Min.) at V_CE=3V, I_C=3A.
hLow Saturation Voltage : V_CE(sat)=1.5V(Max.) at I_C=3A.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation (Tc=25)
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
100
100
5
7
0.2
30
150
-55q150
UNIT
V
V
V
A
A
W


A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
=~ ^5KΩ
=~ ^150Ω
COLLECTOR
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CEO
h_FE(1)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_BE(sat)
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
TEST CONDITION
V_CB=100V, I_E=0
V_EB=5V, I_C=0
I_C=50mA, I_B=0
V_CE=3V, I_C=3A
V_CE=3V, I_C=7A
I_C=3A, I_B=6mA
I_C=7A, I_B=14mA
I_C=3A, I_B=6mA
20µS _{INPUT I B1}
I_B1
I _B2
I_B2
I _B1 =-I _B2 =6mA
DUTY CYCLE 1%
OUTPUT
15Ω
V_CC =45V
MIN.
-
-
100
2000
1000
-
-
-
TYP.
-
-
-
-
-
0.9
1.2
1.5
MAX.
100
3.0
-
15000
-
1.5
2.0
2.5
UNIT
ǺA
mA
V
V
V
-
0.8
-
-
3.0
-
ǺS
-
2.5
-
2007. 5. 22
Revision No : 1
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