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KTD1411_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.)
(VCE=2V, IC=1A)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
80
60
10
4
0.5
15
150
-55 150
UNIT
V
V
V
A
A
W
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Saturation Voltage
Collector-Emitter
Base-Emitter
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=80V, IE=0
VEB=10V, IC=0
IC=10mA, IB=0
VCE=2V, IC=1A
VCE=2V, IC=3A
IC=3A, IB=30mA
IC=3A, IB=30mA
MIN.
-
-
60
3000
1000
-
-
TYP.
-
-
-
-
-
-
-
MAX.
20
100
-
-
-
1.5
2.0
UNIT
A
A
V
V
2003. 7. 24
Revision No : 2
1/2
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